Morphology of Amorphous Pockets in SiC Irradiated with 1 MeV Kr Ions
نویسندگان
چکیده
Radiation-induced amorphization is one of the concerns with SiC as structural components for next-generation nuclear reactors. Numerous studies have been focused on the amorphization mechanisms under electron, neutron, and ion irradiation. Proposed mechanisms for ion-induced amorphization include nucleation and growth of amorphous regions, direct impact combined with stimulated amorphization at crystalline/amorphous (c/a) boundaries, and homogeneous amorphization due to defect accumulation [1]. However, it is still not clear which mechanism governs the amorphization process. Furthermore, current simulation and experimental results imply that the mechanism depends on the irradiation species and on the nano/microstructure of SiC.
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